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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *High current capacity APPLICATIONS *Strobe flash applications *Audio power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 CONDITIONS Open emitter Open base Open collector VALUE -50 -20 -8 -10 -20 -2 20 UNIT V V V A A A PC Collector power dissipation Ta=25 2 150 -55~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1327 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 B -20 V VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.4A -0.5 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-50V;IE=0 -1.0 A IEBO Emitter cut-off current VEB=-8V; IC=0 -1.0 A hFE-1 DC current gain IC=-1A ; VCE=-2V 100 320 hFE -2 DC current gain IC=-8A ; VCE=-2V 70 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-2V 45 MHz hFE-1 Classifications O 100-200 Y 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1327 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1327 4 |
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